Keywords: scientific research, polymers, organic, semiconductors, electrical characterization

 

Opto-electronics at the University of the Algarve

CEOT
part of the CEOT
research unit
description of work | theory pages | current members | address | publications | datasheets | about

Description of work

The research activity is focussed on organic electronics. The main expertise of the group is in electrical characterization techniques, in particular to address impurity states in electronic devices, such as in  Schottky diodes, field effect transistors (MISFETs and TFTs), light emitting diodes (LEDs), solar cells, and also in resistive switching devices for applications in RRAMS.


There is available a broad range of techniques such as:
  • Standard I-V characterization
  • Impedance spectroscopy
  • Deep level transient spectroscopy (DLTS) for low mobility materials
  • Thermal detrapping currents (TSCs)
  • Hall Effect measurements.
  • Magneto-resistance and Magneto-Impedance
  • Time-of flight and other transient techniques

Current research Projects:

Traps in organic based transistors
Bias stress effects in organic  transistor
Modeling of  thin-film field-effect transistor (TFTs)
Switching in polymeric resistance random-access memories (RRAMS)
Nano-crystal based solar cells
Biosensing (impedance studies of cells and tissues)
ZnO and related oxides for device applications

Recent major scientific achievements:

- It has been shown that water contamination is the agent responsible for the critical reliability issues in organic based transistors.

- A model to describe thin-film field-effect transistor (TFTs) was developed. This new model successfully describes the basic behavior of organic based transistors. It describes all non-linearities often found in low-mobility (organic) TFTs, including that behavior normally ascribed to contact effects.

- A detailed investigation of polymeric resistance random-access memories (RRAMS) was conducted. For the first time these new type of memory devices were studied using small signal impedance techniques. The physical process behind the switching mechanism was elucidated.



PMeT
Diamond
aT6
TNT
PMeT diamond 3-D model of alpha-T6
3-D model of TNT molecule



Address


University of the Algarve, 
Campus de Gambelas, FCT, 
8005-139 Faro, 
PORTUGAL 
tel: (+351)  289 800905
fax: +351 289 800

current members
name
tel. ext.
e-mail
www
Prof. Dr. Henrique Leonel Gomes
 7763
7756
e-mail
www
Prof. Dr. Peter Stallinga
7748
e-mail
www
Dr. Alessandra Forner






  Publications of the OrgEl workgroup:

I: Regular publications


Title
Authors
Reference
doc
Determining carrier mobility with a metal-insulator-semiconductor structure P. Stallinga, A.R.V. Benvenho, E.C.P. Smits, S.G.J. Mathijssen, M. Cölle, H.L. Gomes, D.M. de Leeuw Org. Electr. 9, 735 (2008)
doi: 10.1016/j.orgel.2008.05.007
link
Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p–i–n particle detectors
C. Casteleiro, R. Schwarz, U. Mardolcar, A. Maçarico, J. Martins, M. Vieira, F. Wuensch, M. Kunst, E. Morgado, P. Stallinga, H.L. Gomes
Thin Solid Films 516, 5118 (2008)
link
Piezoelectric biosensors assisted with electroacoustic impedance spectroscopy: A tool for accurate quantitative molecular recognition analysis João M. Encarnação, Raul Baltazar, Peter Stallinga, Guilherme N.M. Ferreira J. Molec. Recognition (2008)
doi:10.1002/jmr.907

link
Metal-insulator-metal transistor P. Stallinga, V.A.L. Roy, Z.-X. Xu, C.-M. Che Advanced Materials 20, 2120 (2008)
doi: 10.1002/adma.200702525
paper
Space-separated quantum cutting with Si nanocrystals for photovoltaic applications
D. Timmerman, I. Izeddin, P. Stallinga, I.N. Yassievich, T. Gregorkiewicz
Nature Photonics 2, 105 (2008)
doi: 10.1038/nphoton.2007.279
link
Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors S. Mathijssen, M. Cölle, H. Gomes, E.C.P. Smits, B. de Boer, I. McCulloch, P.A. Bobbert and D.M. de Leeuw Advanced Materials
doi: 10.1002/adma.200602798
link
Detection of chloroform with a sensor array consisting of electrochemically deposited polythiophenes films: Processes governing the electrical response E.R Carvalho, A.A Correa, N.C. Filho, O.N Oliveira, H.L. Gomes, H.C. Mattoso, L. Martin-Neto Sensor Lett. 5, 374 (2007) link
Switching in polymeric resistance random-access memories (RRAMS) H.L. Gomes, A.R.V. Benvenho, D.M. de Leeuw, M. Cölle, P. Stallinga, F. Verbakel and D.M. Taylor Organic Electronics 9, 119 (2008)
doi:10.1016/j.orgel.2007.10.002
link
Reproducible resistive switching in nonvolatile organic memories Frank Verbakel, Stefan C. J. Meskers, René A. J. Janssen. Henrique L. Gomes, Michael Cölle, Michael Büchel, and Dago M. de Leeuw
Appl. Phys. Lett. 91,1 (2007)
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface J. Lancaster, D. M. Taylor, P. Sayers  and H.L. Gomes
Appl. Phys. Lett. 90, 103513 (2007)

Polymer nano-composite Field Effect Transistors Zong-Xiang Xu, V.A.L. Roy, Peter Stallinga, Michele Muccini, Chi-Ming Che Appl. Phys. Lett. 90, 223509 (2007) link
Metal contacts in thin-film transistors P. Stallinga, H.L. Gomes Org. Electr. 8, 300 (2007) paper
Thin-film field-effect transistors: the effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer-Neldel rule P. Stallinga, H.L. Gomes Org. Electr. 7, 592 (2006) paper
Modelling electrical characteristics of thin-film field-effect transistors. II: Effects of traps and impurities. P. Stallinga, H.L. Gomes Synthetic Metals 156, 1316 (2006) paper
Modelling electrical characteristics of thin-film field-effect transistors. I: Trap-free materials.
P. Stallinga, H.L. Gomes
Synthetic Metals 156, 1305 (2006) paper
Influence of electrolytes in the QCM response: Discrimination and quantification of the interference to correct microgravimetric data. João M. Encarnação, P. Stallinga, Guilherme N.M. Ferreira Biosensors and Bioelectronics 22, 1351 (2007)
paper
Electrical instabilities in organic semiconductors caused by trapped supercooled water
H.L. Gomes, P. Stallinga, M. Cölle, D.M. de Leeuw, and F. Biscarini
Appl. Phys. Lett. 88, 082101 (2006)
paper
Traps states as an explanation for the Meyer-Neldel rule in organic semiconductors P. Stallinga, H.L. Gomes Org. Electr. 6, 137 (2005) paper
Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism C. Santato, R. Capelli, M.A. Loi, M. Murgia, F. Cicoira, V.A.L. Roy, P. Stallinga, R. Zamboni, C. Rost, S.F. Karg, and M. Muccini Synthetic Metals 146, 329 (2004)
paper
Bias-Induced threshold voltages shift in thin-film organic transistors H.L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, D.M. De Leeuw, T. Muck, J. Geurts, L.W. Molenkamp, V. Wagner Appl. Phys. Lett. 84, 3184 (2004)
paper
Electronic transport in field-effect transistors of sexithiophene P. Stallinga, H.L. Gomes, F. Biscarini, M. Murgia, D.M. de Leeuw J. Appl. Phys. 96, 5277 (2004)
paper
Interface state mapping in a Schottky barrier of the organic semiconductor terrylene P. Stallinga, H.L. Gomes, M. Murgia, K. Müllen Org. Electr. 3, 43 (2002)
paper
Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization P. Stallinga, H.L. Gomes, H. Rost, A.B. Holmes, M.G. Harrison, and R.H. Friend J. Appl. Phys. 89, 1713 (2001)
paper
Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods H.L. Gomes, P. Stallinga, H. Rost, A.B. Holmes, M.G. Harrison, and R.H. Friend Appl. Phys. Lett. 74, 1144 (1999)
paper

II: Conference contributions


Title
Conference
Authors
Reference
pdf
Study of trap states in zinc oxide (ZnO) thin films for electronic applications

C. Casteleiro, H.L. Gomes, P. Stallinga, L. Bentes, R. Ayouchi, R. Schwarz
Journal of Non-Crystalline Solids 354, 2519 (2008)
paper
Spatially-Resolved Photocapacitance Measurements to Study Defects in a-Si:H Based p-i-n Particle Detectors
E-MRS, Strasbourg 2006
C. Casteleiro, R. Schwarz, A. Maçarico, J. Martins, M. Vieira, F. Wuensch, M. Kunst, E. Morgado, P. Stallinga, H. Gomes
submitted

The effect of water related traps on the reliability of organic based transistors

H.L. Gomes, P. Stallinga, M. Colle, F. Biscarini, and D.M. de Leeuw
J. Non-Crystalline Solids 352, 1761 (2006)
paper
Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties
Materiais 2005, Aveiro 2005 H.L. Gomes, P. Stallinga, and D.M. de Leeuw
Mater. Sci. Forum 514-516, 33 (2006)
paper
Light-emitting thin-film field-effect transistors
invited talk at
ASpect 2, Warsaw
P. Stallinga, H.L. Gomes
Optica Applicata 36, 373 (2006)
paper
Meta-stability effects in organic based transistors
SPIE, Optics and Photonics 2005, San Diego (USA)
H.L. Gomes, P. Stallinga, M. Murgia, F. Biscarini, T. Muck, V. Wagner, E. Smits, D.M. de Leeuw
SPIE Int. Soc. Opt. Eng.
vol. #5940-20
paper(CamReady)
Meta-stability effects in organic based transistors Technologies for Polymer Electronics TPE04, Rudolstadt 2004 H.L. Gomes, P. Stallinga, F. Dinnelli, M. Murgia, F. Biscarini, D.M. De Leeuw Proceedings of the Intern. Symposium "Technologies of Polymer Electronics TPE 04", Rudolstadt/Germany, 28.-30.09.2004, p. 105-110 paper
Explanation of the Meyer-Neldel rule Technologies for Polymer Electronics TPE04, Rudolstadt 2004. P. Stallinga and H.L. Gomes Proceedings of the Intern. Symposium "Technologies of Polymer Electronics TPE 04", Rudolstadt/Germany, 28.-30.09.2004, p. 125-129 paper
A microelectrode impedance method to measure interaction of cells IEEE Sensors 2004, Vienna, 2004 H.L. Gomes, R.B. Leite, R. Afonso, P. Stallinga and M.L. Cancela Proceedings of IEEE Sensors 2004, Vienna, p. 1011-1013 (2004) paper
Detection of explosive vapors using organic thin-film transistors IEEE Sensors 2004, Vienna, 2004 E. Bentes, H.L. Gomes, P. Stallinga Proceedings of IEEE Sensors 2004, Vienna, p. 766-769 (2004) paper
TNT sensor using organic thin film transistors 8th Portuguese-Spanish Congress in Electrical Engineering (2003) E. Bentes, R. Luis, H.L. Gomes, P. Stallinga, L. Moura 8th Portuguese-Spanish Congress in Electrical Engineering (2003), 8CLEEE

Electrical characterization of organic-based transistors: stability issues invited talk at PAT conference, Forth Lauderdale, USA, 2003.
H.L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, D.M. de Leeuw, M. Muccini, K. Müllen Polymers for Adv. Technol. 16, 227 (2005) paper
Electrical characterization of pn-junctions of PPV and silicon ICSM, Gastein, Austria
P. Stallinga, H.L. Gomes, A. Charas, J. Morgado, and L. Alcácer Synth. Metals 121, 1535 (2001) paper
Electrical characterization of CVD diamond-n+silicon junctions Diamond and Related Materials, Pargue 2001
A.M. Rodrigues, H.L. Gomes, P. Stallinga, L. Pereira, E. Pereira Diamond and Related Materials 10, 858 (2001) paper
Determination of deep and shallow levels in conjugated polymers by electrical methods ICDS, Berkeley, California 1999
P. Stallinga, H.L. Gomes, H. Rost, A.B. Holmes, M.G. Harrison, R.H. Friend, F. Biscarini, C. Taliani, G.W. Jones, D.M. Taylor Physica B 273-274, 923 (1999) paper
Electronic levels in MEH-PPV ICEL-2, Sheffield, England
P. Stallinga, H.L. Gomes, H. Rost, A.B. Holmes, M.G. Harrison, and R.H. Friend, Synthetic Metals 111, 535 (2000) paper
Electrical Study of Impurity States in Conjugated Polymers ICSM, Montpellier, France
P. Stallinga, H.L. Gomes, G.W. Jones and D.M. Taylor Synthetic Metals 101, 496 (1999) paper
Electrical Characterization of Semiconducting Polymers
Jaszowiecz XXVII, Poland
P. Stallinga, H.L. Gomes, G.W. Jones, and D.M. Taylor
Acta Phys. Pol. A 94, 545 (1998)
paper

III: Books


Title
Author
Reference
Link
Electrical Characterization of Organic Electronic Materials and Devices P. Stallinga
Wiley
ISBN: 978-0-470-75009-4
Hardcover
316 pages
Electrical Characterization of Organic Electronic Materials and Devices


Theory pages

Theory of electrical characterization of (organic) semiconductors:
Part I:  Bipolar devices: Diodes, Schottky barriers, AC measurements, IV curves
Part II: Theory of MOS-FETs
Part III: Theory of TFTs (thin-film transistors)
 
Bipolar Devices
cross-section of an FET
TFT

Part I: Bipolar Devices
Part II: MOS-FETs Part III: TFTs

Presentations:
SELOA Summer School (2000), Peter Stallinga (power point presentation), part I, part II
 
more theory: when I (P.S.) was working in Berkeley, I wrote the following 
manual for MCD (magnetic circular dichroism of absorption). It might be 
useful to others:  mcd_4dum.pdf


Datasheets/Manuals of electronic equipment of OptoEl

 Equipment
 Brand
 model(s)
 pdf
 Lock-in detector
 Stanford   SR830 Guide
 Digital Oscilloscope
 Tektronix
 TDSxxx
Guide
 Multimeter
 Thurlby Thandar
 TTi 1604
Guide
 Source/Meter
 HP (Agilent)
 6614C
Programmers Guide
 PicoAmp Meter
 Keithley
 487
Quick Guide
Full
 Multimeter
 Keithley
 2000
Quick Guide
User Guide
 Picoammeter/Voltage source
 Keithley
 6487
User's Manual
Reference Manual
 Programmable Power Supply
 Thurlby Thandar
 PL330DP
Programmers Guide
 Pulse Generator (20 ns, 100V)
 Agilent
 8114A
Programmers Guide
 Network Anlyzer
 Hewlet Packard
 8712C
Programmers Guide

 Keithley
 6407

 Temperature Controller
 Oxford
 ITC 601

 Monochromator
 Jobin Yvon
 TRIAX 320

 

 ALG 3102



 RSA 2203A

 RCL bridge
 Fluke
 PM6306
Programmers Card



more information:


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